Transport Properties of Disordered Graphene Layers Auteur(s): Gryglas-Borysiewicz M., Jouault B., Tworzydlo J., Lewinska S., Strupinski W., Baranowski J. M.
Conference: 4th Workshop on Quantum Chaos and Localisation Phenomena (Warsaw (POLAND), FR, 2009-05-22) Ref HAL: hal-00543287_v1 Exporter : BibTex | endNote Résumé: Samples consisting of a few layers of graphene obtained by thermal decomposition of SiC were studied by means of transport experiments at 4 K and in a magnetic field up to 7 T. Transport data show that the samples have a two-dimensional character. Magnetoresistance has an approximately linear character at high magnetic fields, which has been previously observed in graphite samples, and a negative magnetoresistance, at low magnetic fields. The transverse resistivity rho(xy) is nonlinear as a function of B, which can be described using a many-carrier model |