Auteur(s): Camara N., Huntzinger J.-R., Tiberj A., Rius G., Jouault B., Perez-Murano F., Mestres N., Godignon P., Camassel J.
Conference: 7th European Conference on Silicon Carbide and Related Materials (Barcelona (SPAIN), FR, 2008-09-07)
Actes de conférence: SILICON CARBIDE AND RELATED MATERIALS 2008, vol. 615-617 p.203-206 (2009)
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Résumé:
We report a comparative investigation of Few layers graphene grown on 6H, 4H, and 3C-SiC substrates. We show that the size of the graphitic domains depends more on the < 0001 > SiC Surface orientation than the polytypism.