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Résumé:

By performing non-degenerate pump-probe experiments, we study the relaxation dynamics of spin-polarized excitons in wurtzite epitaxial gallium nitride (GaN). Characteristic times of the different spin-relaxation channel (electron, heavy- and light- or split-off-hole spin flips) for different samples as a function of temperature are extracted. We show that the high dislocation density increases the spin relaxation of electrons and holes through the defect-assisted Elliot-Yafet mechanism. (C) 2009 Elsevier B.V. All rights reserved.