Auteur(s): Brimont C., Gallart M., Cregut O., Hoenerlage B., Gilliot P., Lagarde D., Balocchi A., Amand T., Marie X., Founta S., Mariette H.
(Article) Publié: Journal Of Applied Physics, vol. 106 p.053514 (2009)
Ref HAL: hal-00545165_v1
DOI: 10.1063/1.3197035
WoS: 000269850300034
Exporter : BibTex | endNote
13 Citations
Résumé:
The carrier recombination processes and the relaxation dynamics of spin-polarized excitons in cubic epitaxial GaN have been investigated by time-resolved photoluminescence and pump-probe spectroscopy experiments. We evidence a very fast exciton spin relaxation tau(S)similar to 0.3 ps that is influenced by both the high defect concentration and the strong electron-hole exchange interaction. Spectral oscillatory features of the transient reflectivity are observed for negative delays that allow us to determine the exciton optical dephasing time T-2.