Terahertz imaging using high electron mobility transistors as plasma wave detectors Auteur(s): Nadar S., Coquillat D., Sakowicz M., Videlier H., Teppe F., Diakonova N., Knap W., Peiris J.-M., Lyonnet J., Seliuta D., Kasalynas I., Valusis G., Madjour K., Théron D., Gaquière C., Poisson M.-A.
Conference: 15th International Semiconducting and Insulating Materials Conference (SIMC-XV) Vilnius Univ, Vilnius, LITHUANIA (, LT, 2009-06-15) Ref HAL: hal-00545979_v1 DOI: 10.1002/pssc.200982532 WoS: 000279548000062 Exporter : BibTex | endNote 10 Citations Résumé: Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are sensitive to the polarization direction of THz radiation. |