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- Homogeneous linewidth of the intraband transition at 1.55 mu m in GaN/AlN quantum dots doi link

Auteur(s): Nguyen D. T., Wuester W., Roussignol Ph., Voisin C., Cassabois G., Tchernycheva M., Julien F. H., Guillot F., Monroy E.

(Article) Publié: Applied Physics Letters, vol. 97 p.061903 (2010)


Ref HAL: hal-00545467_v1
DOI: 10.1063/1.3476340
WoS: 000280940900022
Exporter : BibTex | endNote
4 Citations
Résumé:

We present homogeneous line width measurements of the intraband transition at 1.55 mu m in GaN/AlN quantum dots by means of nonlinear spectral hole-burning experiments. The square-root dependence of the differential transmission signal with the incident pump power reveals the importance of electron-electron scattering in the population relaxation dynamics. We find on the contrary that this scattering process plays a minor role in the coherence relaxation dynamics since the homogeneous linewidth of 15 meV at 5 K does not depend on the incident pump power. This suggests the predominance of other dephasing mechanisms such as spectral diffusion, and temperature-dependent measurements support this hypothesis. (C) 2010 American Institute of Physics. [doi:10.1063/1.3476340]