Auteur(s): Konczewicz L., Bigenwald P., Cloitre T., Chibane M., Ricou M., Testud P., Briot O., Aulombard R.
Conference: 7th International Conference on II-VI Compounds and Devices (Edinburgh, GB, 1995)
Actes de conférence: JOURNAL OF CRYSTAL GROWTH, vol. 159 p.117 (1996)
Ref HAL: hal-00547062_v1
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Résumé:
The successful growth of MgS epitaxial layers with the MOVPE technique is reported. The samples were grown on GaAs substrates in a classical horizontal reactor, using bis(methylcyclopentadienyl) magnesium and H2S as precursors. The zincblende structure of MgS layers is evidenced by careful X-ray diffraction analysis. The lattice constant is found to be about 5.66 Angstrom. The influence of the growth temperature on the morphology and quality of the layers is studied in detail.