MOVPE growth and optical properties of GaN deposited on c-plane sapphire Auteur(s): Briot O., Gil B., Tchounkeu M., Aulombard R., Demangeot F., Frandon J., Renucci M.
Conference: 38th Electronic Materials Conference (EMC) (SANTA BARBARA (CA), US, 1996-06-26) Ref HAL: hal-00546209_v1 Exporter : BibTex | endNote Résumé: We address combined utilization of temperature dependent reflectance, photoluminescence, and Raman spectroscopy measurements to optimize the structural and electronic properties of GaN epilayers deposited on sapphire. Last, we study residual strain fields in such epilayers. |