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Résumé:

2D materials have shown fascinating fundamental physics as well as exciting technological prospects, from transistors to integrated optoelectronics. Many applications rely on the ability of the 2D material to conduct electrons efficiently. At room temperature, this is mostly limited by the scattering of electrons by phonons. A clear understanding of the electronic transport mechanisms, along with predictive ab initio simulations, are then key to design performant and energy-efficient devices. In this framework, 2D materials present 3 major peculiarities: their reduced dimensionality, the ability to taylor their properties by combining different layers in a van der Waals heterostructure, and the ubiquitous usage of electrostatic doping. The latter refers to the field-effect transistor configuration, in which a gate is used to induce charges in the 2D material and change its Fermi level.We will explore the consequences of those 3 peculiarities on electron-phonon interactions and the scattering mechanisms. We will see how to compute the macroscopic quantities characterising the transport of electrons through the material, and discuss the performances of various layers taken from a database of exfoliable 2D materials build with high-throughput ab initio workflows.