Auteur(s): Camara N., Huntzinger J.-R., Tiberj A., Rius G., Jouault B., Perez-Murano F., Mestres N., Godignon P., Camassel J.
Conference: SILICON CARBIDE AND RELATED MATERIALS 2008 (LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, CH, 2008)
Ref HAL: hal-03037530_v1
DOI: 10.4028/www.scientific.net/MSF.615-617.203
Exporter : BibTex | endNote
Résumé:
We report a comparative investigation of Few layers graphene grown on 6H, 4H, and 3C-SiC substrates. We show that the size of the graphitic domains depends more on the < 0001 > SiC Surface orientation than the polytypism.
Commentaires: 7th European Conference on Silicon Carbide and Related Materials, Barcelona, SPAIN, SEP 07-11, 2008