Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell Auteur(s): Popov V. V., Fateev D. V., Otsuji T., Meziani Y. M., Coquillat D., Knap W. (Article) Publié: Applied Physics Letters, vol. 99 p.243504 (2011) Texte intégral en Openaccess : Ref HAL: hal-00704347_v1 Ref Arxiv: 1111.1807 DOI: 10.1063/1.3670321 WoS: 000298254200064 Ref. & Cit.: NASA ADS Exporter : BibTex | endNote 138 Citations Résumé: Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is predicted for strong asymmetry of the structure unit cell. This value of the responsivity is an order of magnitude greater than reported previously for the other types of uncooled plasmonic terahertz detectors. Such enormous responsivity can be obtained without using any supplementary antenna elements because the double-grating gate acts as an aerial matched antenna that effectively couples the incoming terahertz radiation to plasma oscillations in the structure channel. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3670321] |