Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions Auteur(s): Lewinska S., Gryglas-Borysiewicz M., Przybytek J., Baj M., Jouault B., Gennser U., Ouerghi A. (Article) Publié: Acta Physica Polonica A, vol. 119 p.606-608 (2011) Texte intégral en Openaccess : Ref HAL: hal-03037525_v1 DOI: 10.12693/APhysPolA.119.606 Exporter : BibTex | endNote Résumé: Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon delta-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases. Commentaires: 39th Conference on the Physics of Semiconductors, Jaszowied Int Sch, Krynica-Zdroj, POLAND, JUN 19-24, 2010 |