Ref HAL: hal-03037523_v1
DOI: 10.4028/www.scientific.net/MSF.711.235
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Résumé:

We present the growth and characterization of epitaxial Graphene on the (000-1) and (11-20) planes. In both cases, the growth was carried out in a RF furnace, by implementing our technique of confined atmosphere, covering the SiC substrate with a graphitic cap during the growth. The grown material was investigated by means of AFM, SEM, Raman spectroscopy and magneto transport. Contrary to the (0001) face, in both faces (000-1) and (11-20), almost free standing Graphene monolayers of very high quality are grown. These Graphene sheet are uniform, continuous, almost strain-free and lightly doped. In both faces, Hall bars were fabricated and Shubnikov-de Haas oscillations typical of Graphene, as well as the Half Integer Quantum Hall Effect are observed.

Commentaires: 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), Tours, FRANCE, JUN 27-30, 2011