Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures Auteur(s): Ngo T. H., Rosales D., Gil B., Valvin P., Damilano Benjamin, Lekhal Kaddour, de Mierry Philippe
Conference: GALLIUM NITRIDE MATERIALS AND DEVICES X (san francisco, US, 2015) Ref HAL: hal-01238745_v1 DOI: 10.1117/12.2076208 WoS: WOS:000354279300006 Exporter : BibTex | endNote |