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- Josephson Coupling in Junctions Made of Monolayer Graphene Grown on SiC doi link

Auteur(s): Jouault B., Charpentier S., Massarotti D., Michon A., Paillet M., Huntzinger J.-R., Tiberj A., Zahab A. A., Bauch T., Lucignano P., Tagliacozzo A., Lombardi F., Tafuri F.

(Article) Publié: Journal Of Superconductivity And Novel Magnetism, vol. 29 p.1145-1150 (2016)
Texte intégral en Openaccess : openaccess


Ref HAL: hal-03037515_v1
DOI: 10.1007/s10948-016-3487-1
Exporter : BibTex | endNote
Résumé:

Chemical vapor deposition has proved to be successful in producing graphene samples on silicon carbide (SiC) homogeneous at the centimeter scale in terms of Hall conductance quantization. Here, we report on the realization of co-planar diffusive Al/ monolayer graphene/ Al junctions on the same graphene sheet, with separations between the electrodes down to 200 nm. Robust Josephson coupling has been measured for separations not larger than 300 nm. Transport properties are reproducible on different junctions and indicate that graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices.