Convenient Graphene-Based Quantum Hall Resistance Standards Auteur(s): Brun-Picard J., Ribeiro-Palau R., Lafont F., Kazazis D., Michon A., Cheynis F., Couturaud O., Consejo C., Jouault B., Poirier W., Schopfer F.
Conference: 2016 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2016) (345 E 47TH ST, NEW YORK, NY 10017 USA, ZZ, 2016) Ref HAL: hal-03037516_v1 Exporter : BibTex | endNote Résumé: We report on measurements in large quantum Hall devices, made of high-quality graphene grown by propane/hydrogen chemical vapor deposition on SiC. These devices, having all the properties of an ideal quantum electrical resistance standard, surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their operational conditions. The Hall resistance can be found accurately quantized within one part in 10(9) over a 10-T range of magnetic fields with a lower bound at 3.5 T, temperatures as high as 10 K, or currents as high as 0.5 mA. This simplification sets the superiority of graphene for accessible and low-cost primary resistance standards. Commentaires: Conference on Precision Electromagnetic Measurements (CPEM), Natl Res Council, Ottawa, CANADA, JUL 10-15, 2016 |