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- Indirect excitons in polar GaN/(AlGa)N quantum wells hal link

Auteur(s): Vladimirova M.(Corresp.), Guillet T., Brimont C., Lefebvre P., Bretagnon T., Jouault B., Fedichkin F., Grandjean N, Lahourcade L., Damilano B.

Conférence invité: International school/colloquium in honor of E. Gross (St-Petersbourg, RU, 2017-10-10)


Ref HAL: hal-01932812_v1
Exporter : BibTex | endNote
Résumé:

Light emission in polar group-III nitride quantum wells optically pumped at densities significantly below the lasing threshold is usually interpreted in terms of excitons. Such excitons are characterized by a non-zero dipole moment and long radiative lifetimes, because their constituent electron and hole are spatially separated by the built-in electric field in the growth direction. These features result in many interesting properties of dipolar excitons: they can propagate over large distances and thus cool down to the lattice temperature before recombination, offering the possibility for studies of cold and dense gas of interacting bosons. In this context, two important issues must be addressed: the strength of the exciton-exciton interaction, and the excitonic Mott transition, that sets the maximum density of excitons. Combining spatially and time-resolved photoluminescence in different excitation geometries, we provide a set of experimental data showing that the emission linewidth is proportional to the emission energy in a wide range of carrier densities and temperatures. The proportionality coefficient is almost temperature independent. These results are compared to the existing data in various material systems and discussed in terms of the Mott transition and its criteria, exciton-exciton interaction and its possible contribution to the linewidth, as well as the role of disorder in the density-dependent emission spectra.