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- Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure doi link

Auteur(s): Pierucci Deborah, Zribi Jihene, Henck Hugo, Chaste Julien, Silly Mathieu G., Bertran François, Le Fevre P., Gil B.(Corresp.), Summerfeld Alex, Beton Peter, Novikov Sergei, Cassabois G.(Corresp.), Rault Julien, Ouerghi Abdelkarim

(Article) Publié: Applied Physics Letters, vol. 112 p.253102 (2018)
Texte intégral en Openaccess : openaccess


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DOI: 10.1063/1.5029220
WoS: 000435987400038
Exporter : BibTex | endNote
17 Citations
Résumé:

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap similar to 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN