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- Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy hal link

Auteur(s): Brault Julien, Leroux Mathieu, Matta S., Al Khalfioui Mohamed, Damilano Benjamin, Peyre H., Contreras S., Juillaguet S., Gil B.(Corresp.)

(Affiches/Poster) International Workshop on Nitride Semiconductor (Kanazawa, JP), 2018-11-11


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Résumé:

Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy



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