Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy Auteur(s): Brault Julien, Leroux Mathieu, Matta S., Al Khalfioui Mohamed, Damilano Benjamin, Peyre H., Contreras S., Juillaguet S., Gil B. (Affiches/Poster) International Workshop on Nitride Semiconductor (Kanazawa, JP), 2018-11-11 Ref HAL: hal-01937537_v1 Exporter : BibTex | endNote Résumé: Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy Commentaires: Poster |