Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN Auteur(s): Contreras S., Konczewicz L., Juillaguet S., Peyre H., Al Khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Gil B., Brault Julien (Affiches/Poster) International Workshop on Nitride Semiconductor (Kanazawa, JP), 2018-11-11 Ref HAL: hal-01937531_v1 Exporter : BibTex | endNote Résumé: Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN |