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- Photoluminescence of GaN and AlxGa1-xN (x≤ 0.2) doped with Mg and grown by molecular beam epitaxy

Auteur(s): Leroux Mathieu, Brault Julien, Matta S., Al khalfioui Mohamed, Damilano Benjamin, Contreras S., Juillaguet S., Konczewicz L., Gil B., Brochen S.

(Affiches/Poster) JNMO (Cap Esterel-Aguay, FR), 2018-06-13


Résumé:

Photoluminescence of GaN and AlxGa1-xN (x≤ 0.2) doped with Mg and grown by molecular beam epitaxy