Auteur(s): Pages O., Soltani M., Zaoui A., Certier M., Laurenti J.P., Cloitre T., Aulombard R., Bormann D., Khelifa B.
Conference: 8th International Conference on II-VI Compounds (Grenoble, FR, 1998-08-25)
Actes de conférence: JOURNAL OF CRYSTAL GROWTHVolume: 184Pages: 188-192, vol. 184-185 p.188 - 192 (1998)
Texte intégral en Openaccess : 
Ref HAL: hal-01816844_v1
DOI: 10.1016/S0022-0248(98)80319-9
WoS: 000072653800038
Exporter : BibTex | endNote
3 Citations
Résumé:
Raman scattering is used to investigate p-type accumulation zones on the substrate side of ZnSe—GaAs heterostructures. The intensity imbalance between (i) the near-interfacial phonon-plasmon coupled mode located below the TO frequency and (ii) the uncoupled LO mode from the deep substrate, is studied at a single wavelength under increasing illumination. Competition between electric field-induced scattering and more trivial scattering volume effects is discussed.